PART |
Description |
Maker |
CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 4-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
CY7C1310CV18-167BZXC CY7C1314CV18-167BZI CY7C1314C |
18-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 8 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-IISRAM 2-Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1543KV18-400BZC CY7C1545KV18-450BZXI |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1510AV18-200BZC CY7C1510AV18-200BZI CY7C1510AV |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1511V18-250BZC CY7C1511V18-167BZC |
72-Mbit QDRII SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1314BV18-167BZXC |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1525AV18-167BZC CY7C1525AV18-167BZI CY7C1525AV |
72-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|
CY7C4121KV13 CY7C4141KV13 CY7C4121KV13-600FCXC CY7 |
144-Mbit QDR?IV HP SRAM
|
Cypress Semiconductor
|
HM66AQB18204BP-30 |
36 MBit QDR II SRAM 4 Word Burst
|
Renesas Technology / Hitachi Semiconductor
|